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Spatio-temporal characterization of the multiple current pulse regime of diffuse barrier discharges in helium with nitrogen admixtures

  • Abstract This work reports on the spatio-temporal characterization of the multiple current pulse regime of diffuse barrier discharges driven by sine-wave feeding voltage at a frequency of 2 kHz in helium with small nitrogen admixtures. The discharge gap of 3 mm is bounded by glass plates on both plane electrodes. Priority is given to the lateral discharge inhomogeneities, underlying volume- and surface-memory effects, and the breakdown mechanism. Therefore, relevant processes in the discharge volume and on the dielectric surfaces were investigated by ICCD camera imaging and optical emission spectroscopy in combination with electrical measurements and surface charge diagnostics using the electro-optic Pockels effect of a bismuth silicon oxide crystal. The number of current pulses per half-cycle of the sine-wave voltage rises with increasing nitrogen admixture to helium due to the predominant role of the Penning ionization. Here, the transition from the first glow-like breakdown to the last Townsend-like breakdown is favored by residual species from the former breakdowns which enhance the secondary electron emission during the pre-phase of the later breakdowns. Moreover, the surface charge measurements reveal that the consecutive breakdowns occur alternately at central and peripheral regions on the electrode surface. These spatial inhomogeneities are conserved by the surface charge memory effect as pointed out by the recalculated spatio-temporal development of the gap voltage.

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Metadaten
Author: Marc Bogaczyk, Robert Tschiersch, Sebastian Nemschokmichal, Jürgen Meichsner
URN:urn:nbn:de:gbv:9-opus-58965
DOI:https://doi.org/10.1088/1361-6463/aa875a
ISSN:0022-3727
ISSN:1361-6463
Parent Title (English):Journal of Physics D: Applied Physics
Publisher:IOP Publishing
Document Type:Article
Language:English
Date of first Publication:2017/09/20
Release Date:2022/10/27
Tag:barrier discharge; breakdown mechanism; existence regimes; gap voltage; memory effect; multiple current pulses; surface charge
GND Keyword:-
Volume:50
Issue:41