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Kinetic modeling and infrared spectroscopy of charge carriers across the plasma-wall interface
(2022)
In this thesis, charge transport at the plasma-wall interface is investigated theoretically, on a semiclassical, microscopic level. Based on the Boltzmann and Poisson equations a set of equations is derived and numerically solved to model charge carriers both within a semiconducting wall and a gaseous plasma in front of it. While the plasma is considered collision-free, within the solid, phonon collisions, as well as recombination processes between conduction band electrons and valence band holes are considered. This results, for the first time, in a self-consistent modeling of both the gaseous electron-ion plasma and the electron-hole plasma in the solid on the same footing. Utilizing specific approximations for different physical scenarios, numerical solutions are presented both for the floating and the electronically contacted (biased) interface. In the latter case, the current voltage characteristic is calculated and shown to heavily depend on the charge kinetics within the wall.
Furthermore, we present optical methods to measure the wall charge noninvasively. These utilize the influence of the deposited surplus charges on the optical reflection coefficient of the surface. By calculating the optical response of these charges, we show that the magnitude of the surface charge can be inferred from the change in the reflectivity of the surface caused by the presence of the plasma. While nonlocal effects are considered, it is shown analytically and numerically that these can be neglected at the scales of the considered physical systems.